IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment and had driven the trend towards high currents and high voltage since 1990.
The chip structure also evolved from a flat planar structure to a trench gate structure, and the CSTBT™ (Mitsubishi Electric’s unique IGBT that makes use of the carrier cumulative effect) has enabled low loss and smaller size for industrial equipment.
From the 5th generation IGBT, the lineup has included composite products*1 with a thin profile (NX type) in addition to the former external shape (standard type).
From the S series (6th generation IGBT), there have been additionally offered the T/T1 series (7th generation IGBT), with low power loss and smaller size.
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